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 VISHAY
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Small Surface Mount Diodes
Features
* * * * For surface mounted applications Low profile package Ideal for automated placement Glass passivated
17249
* High temperature soldering: 260 C/ 10 seconds at terminals
Packaging codes-options: GS18 - 10 K per 13" reel (8 mm tape), 50 K/box GS08 - 3 K per 7" reel (8 mm tape), 30 K/box
Mechanical Data
Case: JEDEC -DO219-AB (SMF(R)) Plastic case Polarity: Band denotes cathode end Weight: approx. 0.01 g
Parts Table
Part S07B S07D S07G S07J S07M SB SD SG SJ SM Marking
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Test condition Part S07B S07D S07G S07J S07M Maximum RMS voltage S07B S07D S07G S07J S07M Maximum DC blocking voltage S07B S07D S07G S07J S07M Maximum average forward rectified current T = 75 C1) tp TA = 65 C1) Peak forward surge current 8.3 ms single half sine-wave
1)
Symbol VRRM VRRM VRRM VRRM VRRM VRMS VRMS VRMS VRMS VRMS VDC VDC VDC VDC VDC IF(AV) IF(AV) IFSM
Value 100 200 400 600 1000 70 140 280 420 700 100 200 400 600 1000 1.5 0.7 25
Unit V V V V V V V V V V V V V V V A A A
TL = 25 C
Averaged over any 20 ms period
Document Number 85733 Rev. 1.8, 24-Mar-04
www.vishay.com 1
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air2) Operating junction and storage temperature range
2)
VISHAY
Test condition
Symbol RJA TJ, TSTG
Value 180 - 55 to + 150
Unit K/W C
Mounted on epoxy substrate with 3 x 3 mm CU pads ( 40 m thick)
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage 1.0 A3) Test condition Symbol VF IR IR trr Cj 4 Min Typ. Max 1.1 10 50 1.8 Unit V A A s pF
Maximum DC reverse current at TA = 25 C rated DC blocking voltage TA = 125 C Reverse recovery time Typical capacitance at 4 V, MHz
3)
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Pulse test: 300 pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.2 Resistive or Inductive Load 1.0 1000
0.8
Instantaneous Forward Current (mA)
Average Forward Current (A)
TJ = 150C
TJ = 25C
0.6 0.4
TJ = 100C
0.2 0
3.0 x 3.0mm 40 m Thick Copper Pad Areas 0 20 40 60 80 100 120 140 160
17375
100 600
17376
700
800
900
1000
1100
Ambient Temperature (jC)
Instantaneous Forward Voltage (mV)
Fig. 1 Forward Current Derating Curve
Fig. 2 Typical Instantaneous Forward Characteristics
www.vishay.com 2
Document Number 85733 Rev. 1.8, 24-Mar-04
VISHAY
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
100
Instantaneous Reverse Current (A)
TJ = 150C 10 TJ = 125C TJ = 100C 1 TJ = 75C TJ = 50C
0.1
TJ = 25C 0.01 0 100 200 300 400 500 600 700 800 900
17377
Instantaneous Reverse Voltage (V)
Fig. 3 Typical Instantaneous Reverse Characteristics
10 9 8 7
C (pF)
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
17378
VR (V)
Fig. 4 Capacitance vs. Reverse Voltage
Document Number 85733 Rev. 1.8, 24-Mar-04
www.vishay.com 3
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors Package Dimensions in mm
Cathode Band T op View
VISHAY
1.8 0.1
1.0 0.2
5 0.98 0.1
2.8 0.1
0.05 - 0.30
5 Detail Z enlarged
Z
0.60 0.25
0.00 - 0.10 3.7 0.2
1.6
1.3
1.4
17247
www.vishay.com 4
Document Number 85733 Rev. 1.8, 24-Mar-04
VISHAY
Blistertape for SMF
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
PS
18513
Document Number 85733 Rev. 1.8, 24-Mar-04
www.vishay.com 5
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 6
Document Number 85733 Rev. 1.8, 24-Mar-04


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